cystech electronics corp. spec. no. : c408fi issued date : 2012.09.10 revised date : page no. : 1/ 10 MTN4N60FI cystek product specification n-channel enhancement mode power mosfet bv dss : 600v r ds(on) : 2.1 (typ.) i d : 4a MTN4N60FI description the MTN4N60FI is a n-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost effectiveness. the to-262 package is universally preferred for all commercial-industrial applications features ? low on resistance ? simple drive requirement ? low gate charge ? fast switching characteristic ? rohs compliant package applications ? open framed power supply ? adapter ? stb symbol outline MTN4N60FI to-262 g gate d drain s source g d s
cystech electronics corp. spec. no. : c408fi issued date : 2012.09.10 revised date : page no. : 2/ 10 MTN4N60FI cystek product specification absolute maximum ratings (t c =25 c) parameter symbol limits unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v continuous drain current i d 4* a continuous drain current @t c =100c i d 2.4* a pulsed drain current @ v gs =10v (note 1) i dm 16* a single pulse avalanche energy (note 2) e as 69.8 mj avalanche current (note 1) i ar 4 a repetitive avalanche energy (note 1) e ar 10 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns maximum temperature for solder ing @ lead at 0.125 in(0.318mm) from case for 10 seconds t l 300 c maximum temperature for soldering @ package body for 10 seconds t pkg 260 c w total power dissipation (t c =25 ) linear derating factor pd 100 0.8 w/ c operating junction and storage temperature tj, tstg -55~+150 c *drain current limited by maximum junction temperature note : 1 . repetitive rating; pulse width limited by maximum junction temperature. 2 . i as =4a, v dd =50v, l=8mh, v g =10v, starting tj=+25 . 3 . i sd 4a, di/dt 100a/ s, v dd bv dss , starting tj=+25 . thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 1.25 c/w thermal resistance, junction-to-ambient, max r th,j-a 62.5 c/w
cystech electronics corp. spec. no. : c408fi issued date : 2012.09.10 revised date : page no. : 3/ 10 MTN4N60FI cystek product specification characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 600 - - v v gs =0, i d =250 a, tj=25 ? bv dss / ? tj - 0.6 - v/ c reference to 25c, i d =250 a v gs(th) 2.0 - 4.0 v v ds = v gs , i d =250 a *g fs - 3 - s v ds =15v, i d =2a i gss - - 100 na v gs = 30 - - 1 a v ds =600v, v gs =0 i dss - - 10 a v ds =480v, v gs =0, tj=125 c *r ds(on) - 2.1 2.5 v gs =10v, i d =2a dynamic *qg - 16 - *qgs - 3.2 - *qgd - 6.2 - nc i d =4a, v dd =300v, v gs =10v *t d(on) - 9.6 - *tr - 12.2 - *t d(off) - 22.3 - *t f - 14.8 - ns v dd =300v, i d =4a, v gs =10v, r g =10 ciss - 700 - coss - 86 - crss - 20 - pf v gs =0v, v ds =25v, f=1mhz source-drain diode *v sd - - 1.5 v i s =4a, v gs =0v *i s - - 4 *i sm - - 16 a *trr - 300 - ns *qrr - 2.6 - c v gs =0, i f =4a, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c408fi issued date : 2012.09.10 revised date : page no. : 4/ 10 MTN4N60FI cystek product specification typical characteristics typical output characteristics 0 2 4 6 8 10 0 102030405060 drain-source voltage -v ds (v) drain current - i d (a) v gs =4.5v 15v 10v 9v 7v 5v 5.5v 6v static drain-source on-resistance vs ambient temperature 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -100 -50 0 50 100 150 ambient temperature-ta(c) static drain-source on-state resistance-r ds(on) () i d =2a, v gs =10v static drain-source on-state resistance vs drain current 1.5 2 2.5 3 3.5 4 0.1 1 10 drain current-i d (a) static drain-source on-state resistance-r ds(on) () v gs =10v drain current vs gate-source voltage 0 2 4 6 8 10 0 5 10 15 20 gate-source voltage-vgs(v) drain current-i d(on) (a) ta=25c v ds =10v v ds =30v static drain-source on-state resistance vs gate-source voltage 0 1 2 3 4 5 6 7 8 9 10 468101 2 body diode forward voltage variation vs source current and temperature 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 source drain voltage -v sd (v) reverse drain current-i dr (a) v gs =0v ta=25c ta=150c gate-source voltage-v gs (v) static drain-source on-state resistance-r ds(on) () ta=25c i d =2a
cystech electronics corp. spec. no. : c408fi issued date : 2012.09.10 revised date : page no. : 5/ 10 MTN4N60FI cystek product specification typical characteristics(cont.) capacitance vs reverse voltage 10 100 1000 10000 0 5 10 15 20 25 30 drain-to-source voltage-v ds (v) capacitance-(pf) ciss coss crss f=1mhz brekdown voltage vs ambient temperature 600 650 700 750 800 -100 -50 0 50 100 150 200 ambient temperature-tj(c) drain-source breakdown voltage bv dss (v) i d =250a, v gs =0v maximum safe operating area 0.01 0.1 1 10 100 1 10 100 1000 drain-source voltage -v ds (v) drain current --- i d (a) operation in this area is limited by rds(on) dc 10ms 100ms 1ms 100 s 10 single pulse tc=25c; tj=150c gate charge characteristics 0 2 4 6 8 10 12 0 5 10 15 20 total gate charge---qg(nc) gate-source voltage---v gs (v) i d =4a v ds =120v v ds =300v v ds =480v maximum drain current vs case temperature 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 25 50 75 100 125 150 175 case temperature---t c (c) maximum drain current---i d (a)
cystech electronics corp. spec. no. : c408fi issued date : 2012.09.10 revised date : page no. : 6/ 10 MTN4N60FI cystek product specification typical characteristics(cont.) transient thermal response curves 0.001 0.01 0.1 1 10 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 t 1 , square wave pulse duration(s) z jc (t), thermal response single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.z jc (t)=1.25c/w max. 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *z jc (t)
cystech electronics corp. spec. no. : c408fi issued date : 2012.09.10 revised date : page no. : 7/ 10 MTN4N60FI cystek product specification test circuits and waveforms
cystech electronics corp. spec. no. : c408fi issued date : 2012.09.10 revised date : page no. : 8/ 10 MTN4N60FI cystek product specification test circuits and waveforms(cont.)
cystech electronics corp. spec. no. : c408fi issued date : 2012.09.10 revised date : page no. : 9/ 10 MTN4N60FI cystek product specification to-262 dimension *typical millimeters inches millimeters marking: inches dim min. max. min. max. dim min. max. min. max. a 4.40 4.80 0.1732 0.1890 c2 1.25 1.45 0.0492 0.0571 b 0.76 1.00 0.0299 0.0394 b2 1.17 1.47 0.0461 0.0579 d 8.60 9.00 0.3386 0.3543 l 13.25 14.25 0.5217 0.5610 c 0.36 0.50 0.0142 0.0197 e 2.54 ref 0.1000 ref e 9.80 10.40 0.3858 0.4094 l2 1.27 ref 0.0500 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . style: pin 1.gate 2.drain 3.source 3-lead to-262 plastic package cystek package code: fi date code device name 4n60 1 2 3
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